Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

10.1016/j.sse.2012.05.023

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Bibliographic Details
Main Authors: Da, H., Lam, K.-T., Samudra, G.S., Liang, G., Chin, S.-K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Device performance
Doping concentration
Graphene nanoribbon
Heterojunction
Tunneling field-effect transistors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82529
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82529

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