Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition

Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition

10.1109/LED.2009.2029125

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Bibliographic Details
Main Authors: Wang, J., Zang, H., Yu, M.B., Xiong, Y.Z., Lo, G.Q., Kwong, D.L., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium
Junction field-effect transistor (JFET)
Photodetector
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82288
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82288

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