Optimal ring ratio of 16-star quadrature amplitude modulation in coherent optical communication systems

by Zang, H., Kam, P.-Y., Yu, C.
Published 2014

Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer

by Zang, H., Wang, J., Lo, G.Q., Lee, S.J.
Published 2014

Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel

by Zang, H., Chua, C.K., Loh, W.Y., Cho, B.J.
Published 2014

Tensile-strained germanium CMOS integration on silicon

by Zang, H., Loh, W.Y., Ye, J.D., Lo, G.Q., Cho, B.J.
Published 2014

ZnS/Si composite nano-structured thin films and their photoluminescence

by Zhu, Y., Shen, Z.X., Lim, Y.V., Zang, H., Liu, Y., Wee, A.T.S.
Published 2014

High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering

by Zang, H., Lee, S., Yu, M., Loh, W.Y., Wang, J., Lo, G.-Q., Kwong, D.-L.
Published 2014

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

by Zang, H., Loh, W.Y., Oh, H.J., Choi, K.J., Nguyen, H.S., Lo, G.Q., Cho, B.J.
Published 2014

Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemi...

by Wang, J., Zang, H., Yu, M.B., Xiong, Y.Z., Lo, G.Q., Kwong, D.L., Lee, S.J.
Published 2014

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

by Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J.
Published 2014

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

by Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Yu, M.B., Lo, G.Q., Kwong, D.L., Cho, B.J.
Published 2014

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

by Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Chua, K.T., Yu, M.B., Cho, B.J., Lo, G.Q., Kwong, D.-L.
Published 2014

Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe

by Wong, L.H., Wong, C.C., Liu, J.P., Sohn, D.K., Chan, L., Hsia, L.C., Zang, H., Ni, Z.H., Shen, Z.X.
Published 2014

Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations

by Wang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Loh, T.H., Yu, M.B., Lee, S.J., Lo, G.-Q., Kwong, D.-L.
Published 2014

Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide

by Wang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Tan, S.M.F., Yu, M.B., Lee, S.J., Lo, G.Q., Kwong, D.L.
Published 2014

Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform

by Wang, J., Loh, W.Y., Zang, H., Yu, M.B., Chua, K.T., Loh, T.H., Ye, J.D., Yang, R., Wang, X.L., Lee, S.J., Cho, B.J., Lo, G.Q., Kwong, D.L.
Published 2014