Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel

Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel

10.1149/1.2727430

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Bibliographic Details
Main Authors: Zang, H., Chua, C.K., Loh, W.Y., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83647
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83647

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