Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel

10.1149/1.2727430

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Bibliographic Details
Main Authors:	Zang, H., Chua, C.K., Loh, W.Y., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83647
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83647
record_format	dspace
spelling	sg-nus-scholar.10635-836472015-02-01T16:55:15Z Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel Zang, H. Chua, C.K. Loh, W.Y. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2727430 ECS Transactions 6 1 437-443 2014-10-07T04:43:35Z 2014-10-07T04:43:35Z 2007 Conference Paper Zang, H.,Chua, C.K.,Loh, W.Y.,Cho, B.J. (2007). Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel. ECS Transactions 6 (1) : 437-443. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.2727430" target="_blank">https://doi.org/10.1149/1.2727430</a> 9781566775502 19385862 http://scholarbank.nus.edu.sg/handle/10635/83647 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1149/1.2727430
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zang, H. Chua, C.K. Loh, W.Y. Cho, B.J.
format	Conference or Workshop Item
author	Zang, H. Chua, C.K. Loh, W.Y. Cho, B.J.
spellingShingle	Zang, H. Chua, C.K. Loh, W.Y. Cho, B.J. Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
author_sort	Zang, H.
title	Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
title_short	Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
title_full	Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
title_fullStr	Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
title_full_unstemmed	Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
title_sort	dopant segregated pt and ni germanosilicide schottky s/d p-mosfets with strained si-sige channel
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83647
_version_	1681089474406121472

Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel

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