Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation

by Oh, H.-J., Suleiman, S.A.B., Lee, S.
Published 2014

High-k integration and interface engineering for III-V MOSFETs

by Oh, H.J., Sumarlina, A.B.S., Lee, S.J.
Published 2014

The effect of interfacial layer of high-K dielectrics on GaAs substrate

by Tong, Y., Dalapati, G.K., Oh, H.J., Cho, B.J.
Published 2014

Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor

by Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J.
Published 2014

GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy

by Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
Published 2014

Energy-band alignments of Hf O2 on p-GaAs substrates

by Dalapati, G.K., Oh, H.-J., Lee, S.J., Sridhara, A., Wong, A.S.W., Chi, D.
Published 2014

Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

by Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
Published 2014

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

by Lin, J., Lee, S., Oh, H.-J., Yang, W., Lo, G.Q., Kwong, D.L., Chi, D.Z.
Published 2014

Novel approach of predicting fracture load in the human proximal femur using non-invasive qct imaging technique

by Lee, T., Pereira, B.P., Chung, Y.-S., Oh, H.J., Choi, J.B., Lim, D., Shin, J.H.
Published 2014

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

by Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z.
Published 2014

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

by Zang, H., Loh, W.Y., Oh, H.J., Choi, K.J., Nguyen, H.S., Lo, G.Q., Cho, B.J.
Published 2014

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

by Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J.
Published 2014

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

by Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
Published 2014

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

by Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
Published 2014