Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

by Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
Published 2014

Energy-band alignments of Hf O2 on p-GaAs substrates

by Dalapati, G.K., Oh, H.-J., Lee, S.J., Sridhara, A., Wong, A.S.W., Chi, D.
Published 2014

Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate

by Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
Published 2014

Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

by Chia, C.K., Dong, J.R., Chi, D.Z., Sridhara, A., Wong, A.S.W., Suryana, M., Dalapati, G.K., Chua, S.J., Lee, S.J.
Published 2014

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

by Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
Published 2014