Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

10.1063/1.2968293

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Bibliographic Details
Main Authors: Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57545
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57545

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