Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

by Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z.
Published 2014

On the performance limit of impact-ionization transistors

by Shen, C., Lin, J.-Q., Toh, E.-H., Chang, K.-F., Bait, P., Heng, C.-H., Samudra, G.S., Yeo, Y.-C.
Published 2014

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

by Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
Published 2014

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

by Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
Published 2014