Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

10.1109/LED.2008.2001766

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Bibliographic Details
Main Authors: Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dopant activation
InGaAs
MOSFETs
Self-aligned
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82566
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82566

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