Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS

10.1109/TED.2013.2255057

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Bibliographic Details
Main Authors: Gong, X., Han, G., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E.Y.-J., Su, S., Xue, C., Cheng, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
GeSn pMOSFET
InGaAs nMOSFET
Si2H6 passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83109
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83109

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