Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS

10.1109/TED.2013.2255057

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Main Authors:	Gong, X., Han, G., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E.Y.-J., Su, S., Xue, C., Cheng, B., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	GeSn pMOSFET InGaAs nMOSFET Si2H6 passivation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83109
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83109
record_format	dspace
spelling	sg-nus-scholar.10635-831092024-11-08T19:06:13Z Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS Gong, X. Han, G. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E.Y.-J. Su, S. Xue, C. Cheng, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING GeSn pMOSFET InGaAs nMOSFET Si2H6 passivation 10.1109/TED.2013.2255057 IEEE Transactions on Electron Devices 60 5 1640-1648 IETDA 2014-10-07T04:37:23Z 2014-10-07T04:37:23Z 2013 Article Gong, X., Han, G., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E.Y.-J., Su, S., Xue, C., Cheng, B., Yeo, Y.-C. (2013). Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS. IEEE Transactions on Electron Devices 60 (5) : 1640-1648. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2255057 00189383 http://scholarbank.nus.edu.sg/handle/10635/83109 000319352900021 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	GeSn pMOSFET InGaAs nMOSFET Si2H6 passivation
spellingShingle	GeSn pMOSFET InGaAs nMOSFET Si2H6 passivation Gong, X. Han, G. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E.Y.-J. Su, S. Xue, C. Cheng, B. Yeo, Y.-C. Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
description	10.1109/TED.2013.2255057
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gong, X. Han, G. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E.Y.-J. Su, S. Xue, C. Cheng, B. Yeo, Y.-C.
format	Article
author	Gong, X. Han, G. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E.Y.-J. Su, S. Xue, C. Cheng, B. Yeo, Y.-C.
author_sort	Gong, X.
title	Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
title_short	Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
title_full	Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
title_fullStr	Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
title_full_unstemmed	Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
title_sort	sub-400 °c si2h6 passivation, hfo2 gate dielectric, and single tan metal gate: a common gate stack technology for in0.7ga0.3as and ge1-xsnx cmos
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83109
_version_	1821212907170430976

Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS

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