Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

10.1109/LED.2009.2024649

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Bibliographic Details
Main Authors: Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High mobility
InGaAs
MOSFET
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82614
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82614

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