Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

10.1109/LED.2009.2024649

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Bibliographic Details
Main Authors:	Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High mobility InGaAs MOSFET Strain
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82614
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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