Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

• Main Authors: Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: High mobility; InGaAs; MOSFET; Strain
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82614
• Institution: National University of Singapore

10.1109/LED.2009.2024649