Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

10.1109/LED.2009.2024649

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Bibliographic Details
Main Authors: Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High mobility
InGaAs
MOSFET
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82614
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-826142023-10-27T08:39:19Z Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs Chin, H.-C. Gong, X. Liu, X. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING High mobility InGaAs MOSFET Strain 10.1109/LED.2009.2024649 IEEE Electron Device Letters 30 8 805-807 EDLED 2014-10-07T04:31:27Z 2014-10-07T04:31:27Z 2009 Article Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C. (2009). Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs. IEEE Electron Device Letters 30 (8) : 805-807. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2024649 07413106 http://scholarbank.nus.edu.sg/handle/10635/82614 000268342400005 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic High mobility
InGaAs
MOSFET
Strain
spellingShingle High mobility
InGaAs
MOSFET
Strain
Chin, H.-C.
Gong, X.
Liu, X.
Yeo, Y.-C.
Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
description 10.1109/LED.2009.2024649
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chin, H.-C.
Gong, X.
Liu, X.
Yeo, Y.-C.
format Article
author Chin, H.-C.
Gong, X.
Liu, X.
Yeo, Y.-C.
author_sort Chin, H.-C.
title Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
title_short Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
title_full Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
title_fullStr Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
title_full_unstemmed Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
title_sort lattice-mismatched in0.4ga0.6as source/drain stressors with in situ doping for strained in0.53 ga0.47 as channel n-mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82614
_version_ 1781784182842720256

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