Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

10.1109/VTSA.2009.5159330

Saved in:
Bibliographic Details
Main Authors: Chin, H.-C., Liu, X., Tan, L.-S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83858
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83858

Similar Items