Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

10.1109/VTSA.2009.5159330

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Main Authors:	Chin, H.-C., Liu, X., Tan, L.-S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83858
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83858
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spelling	sg-nus-scholar.10635-838582015-01-09T06:26:27Z Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts Chin, H.-C. Liu, X. Tan, L.-S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2009.5159330 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 143-144 2014-10-07T04:46:00Z 2014-10-07T04:46:00Z 2009 Conference Paper Chin, H.-C.,Liu, X.,Tan, L.-S.,Yeo, Y.-C. (2009). Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 143-144. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2009.5159330" target="_blank">https://doi.org/10.1109/VTSA.2009.5159330</a> 9781424427857 http://scholarbank.nus.edu.sg/handle/10635/83858 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VTSA.2009.5159330
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Liu, X. Tan, L.-S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Chin, H.-C. Liu, X. Tan, L.-S. Yeo, Y.-C.
spellingShingle	Chin, H.-C. Liu, X. Tan, L.-S. Yeo, Y.-C. Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
author_sort	Chin, H.-C.
title	Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
title_short	Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
title_full	Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
title_fullStr	Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
title_full_unstemmed	Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
title_sort	inversion-type surface channel in0.53ga0.47as metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and cmos-compatible pdge contacts
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83858
_version_	1681089513123741696

Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

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