Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

• Main Authors: Chin, H.-C., Liu, X., Tan, L.-S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83858
• Institution: National University of Singapore

10.1109/VTSA.2009.5159330