Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor

Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor

10.1149/1.3465300

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Bibliographic Details
Main Authors: Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83105
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83105

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