Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor

10.1149/1.3465300

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Main Authors: Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83105
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-831052023-10-27T07:22:47Z Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor Suleiman, S.A. Oh, H.J. Du, A. Ng, C.M. Lee, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3465300 Electrochemical and Solid-State Letters 13 10 H336-H338 ESLEF 2014-10-07T04:37:20Z 2014-10-07T04:37:20Z 2010 Article Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J. (2010). Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor. Electrochemical and Solid-State Letters 13 (10) : H336-H338. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3465300 10990062 http://scholarbank.nus.edu.sg/handle/10635/83105 000280769700009 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1149/1.3465300
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Suleiman, S.A.
Oh, H.J.
Du, A.
Ng, C.M.
Lee, S.J.
format Article
author Suleiman, S.A.
Oh, H.J.
Du, A.
Ng, C.M.
Lee, S.J.
spellingShingle Suleiman, S.A.
Oh, H.J.
Du, A.
Ng, C.M.
Lee, S.J.
Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
author_sort Suleiman, S.A.
title Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
title_short Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
title_full Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
title_fullStr Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
title_full_unstemmed Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
title_sort study on thermal stability of plasma-ph3 passivated hfalo/in0.53ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83105
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