In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application

• Main Authors: Loke, Wan Khai, Wang, Yue, Gao, Yu, Khaw, Lina, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Heterojunction Bipolar Transistors; III-V and CMOS Integration; InGaAs; Germanium
• Online Access: https://hdl.handle.net/10356/156029
• Institution: Nanyang Technological University

We report an In0.3Ga0.7As HBT device grown on a 200 mm Si wafer using GeSi as virtual starting substrate and InAlAs as the compositionally graded buffer layer from GaAs to In0.3Ga0.7As lattice constant. A DC gain, emitter-base, and base-collector ideality factors of 10, 1.43, and 1.56, respectively,...