Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

10.1109/LED.2008.2001766

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Bibliographic Details
Main Authors:	Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dopant activation InGaAs MOSFETs Self-aligned
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82566
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82566
record_format	dspace
spelling	sg-nus-scholar.10635-825662023-10-25T23:17:59Z Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate Lin, J.Q. Lee, S.J. Oh, H.J. Lo, G.Q. Kwong, D.L. Chi, D.Z. ELECTRICAL & COMPUTER ENGINEERING Dopant activation InGaAs MOSFETs Self-aligned 10.1109/LED.2008.2001766 IEEE Electron Device Letters 29 9 977-980 EDLED 2014-10-07T04:30:53Z 2014-10-07T04:30:53Z 2008 Article Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z. (2008). Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate. IEEE Electron Device Letters 29 (9) : 977-980. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001766 07413106 http://scholarbank.nus.edu.sg/handle/10635/82566 000259573400003 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dopant activation InGaAs MOSFETs Self-aligned
spellingShingle	Dopant activation InGaAs MOSFETs Self-aligned Lin, J.Q. Lee, S.J. Oh, H.J. Lo, G.Q. Kwong, D.L. Chi, D.Z. Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
description	10.1109/LED.2008.2001766
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lin, J.Q. Lee, S.J. Oh, H.J. Lo, G.Q. Kwong, D.L. Chi, D.Z.
format	Article
author	Lin, J.Q. Lee, S.J. Oh, H.J. Lo, G.Q. Kwong, D.L. Chi, D.Z.
author_sort	Lin, J.Q.
title	Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
title_short	Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
title_full	Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
title_fullStr	Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
title_full_unstemmed	Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
title_sort	inversion-mode self-aligned in0.53ga0.47 as n-channel metal-oxide-semiconductor field-effect transistor with hfalo gate dielectric and tan metal gate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82566
_version_	1781784172076990464

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

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