Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation

by Oh, H.-J., Suleiman, S.A.B., Lee, S.
Published 2014

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

by Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
Published 2014