Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

10.1063/1.2968293

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Main Authors:	Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57545
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57545
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spelling	sg-nus-scholar.10635-575452023-10-30T21:53:01Z Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy Oh, H.J. Lin, J.Q. Lee, S.J. Dalapati, G.K. Sridhara, A. Chi, D.Z. Chua, S.J. Lo, G.Q. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2968293 Applied Physics Letters 93 6 - APPLA 2014-06-17T03:07:24Z 2014-06-17T03:07:24Z 2008 Article Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L. (2008). Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy. Applied Physics Letters 93 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2968293 00036951 http://scholarbank.nus.edu.sg/handle/10635/57545 000258491000036 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2968293
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Oh, H.J. Lin, J.Q. Lee, S.J. Dalapati, G.K. Sridhara, A. Chi, D.Z. Chua, S.J. Lo, G.Q. Kwong, D.L.
format	Article
author	Oh, H.J. Lin, J.Q. Lee, S.J. Dalapati, G.K. Sridhara, A. Chi, D.Z. Chua, S.J. Lo, G.Q. Kwong, D.L.
spellingShingle	Oh, H.J. Lin, J.Q. Lee, S.J. Dalapati, G.K. Sridhara, A. Chi, D.Z. Chua, S.J. Lo, G.Q. Kwong, D.L. Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
author_sort	Oh, H.J.
title	Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
title_short	Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
title_full	Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
title_fullStr	Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
title_full_unstemmed	Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
title_sort	study on interfacial properties of ingaas and gaas integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57545
_version_	1781781432336646144

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

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