Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

• Main Authors: Lin, J., Lee, S., Oh, H.-J., Yang, W., Lo, G.Q., Kwong, D.L., Chi, D.Z.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/84101

10.1109/IEDM.2008.4796705