SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack

10.1149/1.2197127

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Bibliographic Details
Main Authors: Gao, F., Lee, S.J., Rui, L., Wang, S.J., Cho, B.J., Balakumar, S., Tung, C.-H., Chi, D.Z., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83016
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83016

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