Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate

Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate

10.1109/IWJT.2007.4279953

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Bibliographic Details
Main Authors: Gao, F., Li, R., Chi, D.Z., Balakumar, S., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83946
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83946

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