Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
10.1109/IWJT.2007.4279953
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Main Authors: | Gao, F., Li, R., Chi, D.Z., Balakumar, S., Lee, S.J. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83946 |
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Institution: | National University of Singapore |
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