APA引文

Gao, F., Li, R., Chi, D., Balakumar, S., Lee, S., & ENGINEERING, E. &. C. (2014). Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate.

Chicago Style Citation

Gao, F., R. Li, D.Z Chi, S. Balakumar, S.J Lee, and ELECTRICAL & COMPUTER ENGINEERING. Metal-germanide Schottky Source/drain Transistor With High-k/metal Gate Stack On Ge and Si0.05Ge0.95/Si Substrate. 2014.

MLA引文

Gao, F., et al. Metal-germanide Schottky Source/drain Transistor With High-k/metal Gate Stack On Ge and Si0.05Ge0.95/Si Substrate. 2014.