Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

10.1109/IPFA.2006.251050

Saved in:
Bibliographic Details
Main Authors: Balakumar, S., Jun Wei, T., Tung, C.H., Lo, G.Q., Nguyen, H.S., Fong, C.S., Agarwal, A., Kumar, R., Balasubramanian, N., Lee, S.J., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70278
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/70278

Similar Items