Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

10.1109/IPFA.2006.251050

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Bibliographic Details
Main Authors:	Balakumar, S., Jun Wei, T., Tung, C.H., Lo, G.Q., Nguyen, H.S., Fong, C.S., Agarwal, A., Kumar, R., Balasubramanian, N., Lee, S.J., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70278
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70278
record_format	dspace
spelling	sg-nus-scholar.10635-702782024-11-10T21:13:19Z Fabrication of high Ge content SiGe layer on Si by Ge condensation technique Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IPFA.2006.251050 Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 301-305 2014-06-19T03:10:17Z 2014-06-19T03:10:17Z 2006 Conference Paper Balakumar, S.,Jun Wei, T.,Tung, C.H.,Lo, G.Q.,Nguyen, H.S.,Fong, C.S.,Agarwal, A.,Kumar, R.,Balasubramanian, N.,Lee, S.J.,Kwong, D.L. (2006). Fabrication of high Ge content SiGe layer on Si by Ge condensation technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 301-305. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2006.251050" target="_blank">https://doi.org/10.1109/IPFA.2006.251050</a> 1424402069 http://scholarbank.nus.edu.sg/handle/10635/70278 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IPFA.2006.251050
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L.
format	Conference or Workshop Item
author	Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L.
spellingShingle	Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
author_sort	Balakumar, S.
title	Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_short	Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_full	Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_fullStr	Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_full_unstemmed	Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_sort	fabrication of high ge content sige layer on si by ge condensation technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70278
_version_	1821185534780768256

Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

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