Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

10.1109/IPFA.2006.251050

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Main Authors: Balakumar, S., Jun Wei, T., Tung, C.H., Lo, G.Q., Nguyen, H.S., Fong, C.S., Agarwal, A., Kumar, R., Balasubramanian, N., Lee, S.J., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70278
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-702782024-11-10T21:13:19Z Fabrication of high Ge content SiGe layer on Si by Ge condensation technique Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IPFA.2006.251050 Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 301-305 2014-06-19T03:10:17Z 2014-06-19T03:10:17Z 2006 Conference Paper Balakumar, S.,Jun Wei, T.,Tung, C.H.,Lo, G.Q.,Nguyen, H.S.,Fong, C.S.,Agarwal, A.,Kumar, R.,Balasubramanian, N.,Lee, S.J.,Kwong, D.L. (2006). Fabrication of high Ge content SiGe layer on Si by Ge condensation technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 301-305. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2006.251050" target="_blank">https://doi.org/10.1109/IPFA.2006.251050</a> 1424402069 http://scholarbank.nus.edu.sg/handle/10635/70278 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/IPFA.2006.251050
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Balakumar, S.
Jun Wei, T.
Tung, C.H.
Lo, G.Q.
Nguyen, H.S.
Fong, C.S.
Agarwal, A.
Kumar, R.
Balasubramanian, N.
Lee, S.J.
Kwong, D.L.
format Conference or Workshop Item
author Balakumar, S.
Jun Wei, T.
Tung, C.H.
Lo, G.Q.
Nguyen, H.S.
Fong, C.S.
Agarwal, A.
Kumar, R.
Balasubramanian, N.
Lee, S.J.
Kwong, D.L.
spellingShingle Balakumar, S.
Jun Wei, T.
Tung, C.H.
Lo, G.Q.
Nguyen, H.S.
Fong, C.S.
Agarwal, A.
Kumar, R.
Balasubramanian, N.
Lee, S.J.
Kwong, D.L.
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
author_sort Balakumar, S.
title Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_short Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_full Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_fullStr Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_full_unstemmed Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
title_sort fabrication of high ge content sige layer on si by ge condensation technique
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/70278
_version_ 1821185534780768256