Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
10.1109/IPFA.2006.251050
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2014
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sg-nus-scholar.10635-702782024-11-10T21:13:19Z Fabrication of high Ge content SiGe layer on Si by Ge condensation technique Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IPFA.2006.251050 Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 301-305 2014-06-19T03:10:17Z 2014-06-19T03:10:17Z 2006 Conference Paper Balakumar, S.,Jun Wei, T.,Tung, C.H.,Lo, G.Q.,Nguyen, H.S.,Fong, C.S.,Agarwal, A.,Kumar, R.,Balasubramanian, N.,Lee, S.J.,Kwong, D.L. (2006). Fabrication of high Ge content SiGe layer on Si by Ge condensation technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 301-305. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2006.251050" target="_blank">https://doi.org/10.1109/IPFA.2006.251050</a> 1424402069 http://scholarbank.nus.edu.sg/handle/10635/70278 NOT_IN_WOS Scopus |
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10.1109/IPFA.2006.251050 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. |
format |
Conference or Workshop Item |
author |
Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. |
spellingShingle |
Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L. Fabrication of high Ge content SiGe layer on Si by Ge condensation technique |
author_sort |
Balakumar, S. |
title |
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique |
title_short |
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique |
title_full |
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique |
title_fullStr |
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique |
title_full_unstemmed |
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique |
title_sort |
fabrication of high ge content sige layer on si by ge condensation technique |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/70278 |
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