Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

10.1109/IPFA.2006.251050

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Bibliographic Details
Main Authors: Balakumar, S., Jun Wei, T., Tung, C.H., Lo, G.Q., Nguyen, H.S., Fong, C.S., Agarwal, A., Kumar, R., Balasubramanian, N., Lee, S.J., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70278
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Institution: National University of Singapore
Description
Summary:10.1109/IPFA.2006.251050

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