Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
10.1109/IPFA.2006.251050
Saved in:
Main Authors: | Balakumar, S., Jun Wei, T., Tung, C.H., Lo, G.Q., Nguyen, H.S., Fong, C.S., Agarwal, A., Kumar, R., Balasubramanian, N., Lee, S.J., Kwong, D.L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70278 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
SiGe amorphization during Ge condensation in silicon germanium on insulator
by: Balakumar, S., et al.
Published: (2014) -
Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
by: Balakumar, S., et al.
Published: (2014) -
Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
by: Jiang, Y., et al.
Published: (2014) -
Study on SiGe nanowire shape engineering and Ge condensation
by: Ma, F.-J., et al.
Published: (2014) -
GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy
by: Oh, H.J., et al.
Published: (2014)