Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement

Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement

10.1149/1.3118959

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83851
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83851

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