Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement

10.1149/1.3118959

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83851
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-838512023-10-26T09:11:41Z Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement Sinha, M. Lee, R.T.P. Devi, S.N. Lo, G.-Q. Chor, E.F. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3118959 ECS Transactions 19 1 323-330 2014-10-07T04:45:55Z 2014-10-07T04:45:55Z 2009 Conference Paper Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C. (2009). Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement. ECS Transactions 19 (1) : 323-330. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3118959 9781566777094 19385862 http://scholarbank.nus.edu.sg/handle/10635/83851 000272170600034 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1149/1.3118959
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Sinha, M.
Lee, R.T.P.
Devi, S.N.
Lo, G.-Q.
Chor, E.F.
Yeo, Y.-C.
format Conference or Workshop Item
author Sinha, M.
Lee, R.T.P.
Devi, S.N.
Lo, G.-Q.
Chor, E.F.
Yeo, Y.-C.
spellingShingle Sinha, M.
Lee, R.T.P.
Devi, S.N.
Lo, G.-Q.
Chor, E.F.
Yeo, Y.-C.
Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
author_sort Sinha, M.
title Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
title_short Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
title_full Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
title_fullStr Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
title_full_unstemmed Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
title_sort integration of al segregated nisige/sige source/drain contact technology in p-finfets for drive current enhancement
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83851
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