P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reduction

P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reduction

10.1109/VTSA.2009.5159297

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84082
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84082

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