High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates

High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates

10.1149/1.2087167

Saved in:
Bibliographic Details
Main Authors: Gao, F., Balakumar, S., Balasubramanian, N., Lee, S.J., Tung, C.H., Kumar, R., Sudhiranjan, T., Foo, Y.L., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82449
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82449

Similar Items