High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates
10.1149/1.2087167
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Main Authors: | Gao, F., Balakumar, S., Balasubramanian, N., Lee, S.J., Tung, C.H., Kumar, R., Sudhiranjan, T., Foo, Y.L., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82449 |
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Institution: | National University of Singapore |
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