Highly oriented Ni(Pd)SiGe formation at 400 °c

• Main Authors: Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56199
• Institution: National University of Singapore

10.1063/1.1899759