Highly oriented Ni(Pd)SiGe formation at 400 °c

10.1063/1.1899759

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Bibliographic Details
Main Authors:	Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56199
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56199
record_format	dspace
spelling	sg-nus-scholar.10635-561992023-10-25T20:21:47Z Highly oriented Ni(Pd)SiGe formation at 400 °c Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Tung, C.H. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1899759 Journal of Applied Physics 97 10 - JAPIA 2014-06-17T02:51:52Z 2014-06-17T02:51:52Z 2005-05-15 Article Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H. (2005-05-15). Highly oriented Ni(Pd)SiGe formation at 400 °c. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1899759 00218979 http://scholarbank.nus.edu.sg/handle/10635/56199 000230168100179 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1899759
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Tung, C.H.
format	Article
author	Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Tung, C.H.
spellingShingle	Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Tung, C.H. Highly oriented Ni(Pd)SiGe formation at 400 °c
author_sort	Jin, L.J.
title	Highly oriented Ni(Pd)SiGe formation at 400 °c
title_short	Highly oriented Ni(Pd)SiGe formation at 400 °c
title_full	Highly oriented Ni(Pd)SiGe formation at 400 °c
title_fullStr	Highly oriented Ni(Pd)SiGe formation at 400 °c
title_full_unstemmed	Highly oriented Ni(Pd)SiGe formation at 400 °c
title_sort	highly oriented ni(pd)sige formation at 400 °c
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56199
_version_	1781781126520504320

Highly oriented Ni(Pd)SiGe formation at 400 °c

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