Supply-voltage optimization for below-70-nm technology-node MOSFETs

by Wakabayashi, H., Samudra, G.S., Djomehri, I.J., Nayfeh, H., Antoniadis, D.A.
Published 2014

Stability and composition of Ni-germanosilicided Si 1-xGe x films

by Pey, K.L., Chattopadhyay, S., Choi, W.K., Miron, Y., Fitzgerald, E.A., Antoniadis, D.A., Osipowicz, T.
Published 2014

Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?

by Kan, E.W.H., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Antoniadis, D.A.
Published 2014

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

by Ong, B. S., Pey, Kin Leong, Ong, C. Y., Tan, Chuan Seng, Antoniadis, D. A., Fitzgerald, E. A.
Published 2017

Thermal reaction of nickel and Si0.75Ge0.25 alloy

by Pey, K.L., Choi, W.K., Chattopadhyay, S., Zhao, H.B., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S.
Published 2014

Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

by Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S.
Published 2014

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

by Jin, L.J., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.
Published 2014

Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

by Kan, E.W.H., Choi, W.K., Leoy, C.C., Chim, W.K., Antoniadis, D.A., Fitzgerald, E.A.
Published 2014

Thermal reaction of nickel and Si0.75Ge0.25 alloy

by Pey, Kin Leong, Chattopadhyay, Sujay, Lee, Pooi See, Choi, W. K., Zhao, H. B., Antoniadis, D. A., Fitzgerald, Eugene A.
Published 2012

Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

by Pey, Kin Leong, Chattopadhyay, Sujay, Lee, Pooi See, Zhao, H. B., Choi, W. K., Antoniadis, D. A., Fitzgerald, Eugene A.
Published 2012

Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

by Yu, H.P., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z., Tung, C.H.
Published 2014

Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure

by Choi, W.K., Chim, W.K., Heng, C.L., Teo, L.W., Ho, V., Ng, V., Antoniadis, D.A., Fitzgerald, E.A.
Published 2014

N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

by Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K.
Published 2014

Manipulation of germanium nanocrystals in a tri-layer insulator structure of a metal-insulator-semiconductor memory device

by Teo, L.W., Heng, C.L., Ho, V., Tay, M., Choi, W.K., Chim, W.K., Antoniadis, D.A., Fitzgerald, E.A.
Published 2014

Highly oriented Ni(Pd)SiGe formation at 400 °c

by Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H.
Published 2014

Study of Ge out-diffusion during nickel (Platinum - 0, 5, 10 at.%) germanosilicide formation

by Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z.
Published 2014

Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate

by Yu, H.P., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Dawood, M.K., Ow, K.Q., Chi, D.Z.
Published 2014

The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2

by Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.
Published 2014

Suppression of oxidation in nickel germanosilicides by Pt incorporation

by Rahman, M.A., Osipowicz, T., Pey, K.L., Jin, L.J., Choi, W.K., Chi, D.Z., Antoniadis, D.A., Fitzgerald, E.A., Isaacson, D.M.
Published 2014

The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

by Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H.
Published 2014