Highly oriented Ni(Pd)SiGe formation at 400 °c

10.1063/1.1899759

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Bibliographic Details
Main Authors: Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56199
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Institution: National University of Singapore
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Summary:10.1063/1.1899759