Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate

• Main Authors: Bose, Sumanta, Fan, W. J., Jian, C., Zhang, D. H., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/105025; http://hdl.handle.net/10220/20424; http://dx.doi.org/10.1109/ISTDM.2014.6874705
• Institution: Nanyang Technological University

Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavele...