Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate

Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavele...

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Main Authors:	Bose, Sumanta, Fan, W. J., Jian, C., Zhang, D. H., Tan, Chuan Seng
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2014
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	https://hdl.handle.net/10356/105025 http://hdl.handle.net/10220/20424 http://dx.doi.org/10.1109/ISTDM.2014.6874705
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-105025
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spelling	sg-ntu-dr.10356-1050252019-12-06T21:44:40Z Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate Bose, Sumanta Fan, W. J. Jian, C. Zhang, D. H. Tan, Chuan Seng School of Electrical and Electronic Engineering 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Centre for Micro-/Nano-electronics (NOVITAS) DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavelength range [2] which can revolutionize the photonics industry - leading to new design of LEDs, photodetectors, laser diodes and electro optical modulators. MOE (Min. of Education, S’pore) Accepted version 2014-08-28T06:01:59Z 2019-12-06T21:44:40Z 2014-08-28T06:01:59Z 2019-12-06T21:44:40Z 2014 2014 Conference Paper Bose, S., Fan, W. J., Jian, C., Zhang, D. H., & Tan, C. S. (2014). Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate. Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International , 129-130. doi: 10.1109/ISTDM.2014.6874705 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6874705&isnumber=6874620 https://hdl.handle.net/10356/105025 http://hdl.handle.net/10220/20424 http://dx.doi.org/10.1109/ISTDM.2014.6874705 en © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/ISTDM.2014.6874705]. This is a 4 page long conference paper. application/pdf application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Bose, Sumanta Fan, W. J. Jian, C. Zhang, D. H. Tan, Chuan Seng Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
description	Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavelength range [2] which can revolutionize the photonics industry - leading to new design of LEDs, photodetectors, laser diodes and electro optical modulators.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Bose, Sumanta Fan, W. J. Jian, C. Zhang, D. H. Tan, Chuan Seng
format	Conference or Workshop Item
author	Bose, Sumanta Fan, W. J. Jian, C. Zhang, D. H. Tan, Chuan Seng
author_sort	Bose, Sumanta
title	Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
title_short	Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
title_full	Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
title_fullStr	Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
title_full_unstemmed	Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
title_sort	strain profile, electronic band structure and optical gain of self-assembled ge quantum dots on sige virtual substrate
publishDate	2014
url	https://hdl.handle.net/10356/105025 http://hdl.handle.net/10220/20424 http://dx.doi.org/10.1109/ISTDM.2014.6874705
_version_	1681036228637491200

Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate

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