Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate

Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate

Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavele...

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Bibliographic Details
Main Authors: Bose, Sumanta, Fan, W. J., Jian, C., Zhang, D. H., Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/105025
http://hdl.handle.net/10220/20424
http://dx.doi.org/10.1109/ISTDM.2014.6874705
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Institution: Nanyang Technological University
Language: English
Description
Summary:Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavelength range [2] which can revolutionize the photonics industry - leading to new design of LEDs, photodetectors, laser diodes and electro optical modulators.

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