Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs

10.1109/VTSA.2008.4530830

Saved in:
Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Chan, T.K., Osipowicz, T., Foo, Y.-L., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84127
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84127

Similar Items