Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs

• Main Authors: Wang, G.H., Toh, E.-H., Chan, T.K., Osipowicz, T., Foo, Y.-L., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84127
• Institution: National University of Singapore

10.1109/VTSA.2008.4530830