Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
10.1109/VTSA.2008.4530830
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| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84127 |
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| Institution: | National University of Singapore |