Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer

• Main Authors: Han, G., Su, S., Wang, L., Wang, W., Gong, X., Yang, Y., Ivana, Guo, P., Guo, C., Zhang, G., Pan, J., Zhang, Z., Xue, C., Cheng, B., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84231
• Institution: National University of Singapore

10.1109/VLSIT.2012.6242479